• Zielgruppen
  • Suche

Ulrich Starke

Interface Analysis

Max Planck Institute for Solid State Research

Phone  +49  711 / 689 1345

Email: u.starke@fkf.mpg.de

Web: www2.fkf.mpg.de/ga/


Semiconductor and metal surface science; RF-furnace growth of large scale epitaxial graphene on SiC and its characterization by LEED, ARPES, XPS, LEEM, PEEM, STM, AFM, Raman; Functionalization and Intercalation of epitaxial graphene; Nanostructure assembly (molecular, lithographic); access to e-beam lithography and SEM characterization within the MPI.

Relevant Publications

C. Riedl, C. Coletti, T. Iwasaki, A.A. Zakharov, and U. Starke, Quasi-free standing epitaxial graphene layers on   SiC by hydrogen intercalation. Phys. Rev. Lett. 103, 246804 (2009).

K.V. Emtsev, A.A. Zakharov, C. Coletti, S. Forti, and U. Starke, Ambipolar doping in quasi-free epitaxial graphene on SiC(0001) controlled by Ge intercalation., Phys. Rev. B 84, 125423 (2011).

U. Starke, S. Forti, K.V. Emtsev, and C. Coletti, Engineering of the electronic structure of epitaxial graphene by transfer doping and atomic intercalation, MRS Bulletin 37, 1177-1186 (2012).

I. Gierz, J.C. Petersen, M. Mitrano, C. Cacho, I.C.E. Turcu, E. Springate, A. Stöhr, A. Köhler, U. Starke, and A. Snapshots of non-equilibrium Dirac carrier distributions in graphene, Nat. Mater., 12, 1119 (2013).

J. Baringhaus, A. Stöhr, S. Forti, S. A. Krasnikov, A. A. Zakharov, U. Starke, and C. Tegenkamp, Bipolar gating of epitaxial graphene by intercalation of Ge, Appl. Phys. Lett., 104, 261602 (2014).